Table of Contents
Journal of Nanoscience
Volume 2016 (2016), Article ID 8132701, 7 pages
http://dx.doi.org/10.1155/2016/8132701
Research Article

Demonstration of Ultra-Fast Switching in Nanometallic Resistive Switching Memory Devices

Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104-6272, USA

Received 31 March 2016; Accepted 25 July 2016

Academic Editor: Xuhui Sun

Copyright © 2016 Xiang Yang. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Xiang Yang, “Demonstration of Ultra-Fast Switching in Nanometallic Resistive Switching Memory Devices,” Journal of Nanoscience, vol. 2016, Article ID 8132701, 7 pages, 2016. doi:10.1155/2016/8132701