Research Article
Demonstration of Ultra-Fast Switching in Nanometallic Resistive Switching Memory Devices
Figure 1
(a) Top view SEM image of devices ranging from 512 × 512 μm2 to 100 × 100 nm2. (b) Planar view TEM image of 93% SiN4/3:7% Pt films. Dark regions are clustered Pt nanoparticles (<1 nm). (c) The schematic for fabricated Mo/Si3N4:Pt/Pt devices and the experimental setup.
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