Journal of Nanoscience / 2016 / Article / Fig 1

Research Article

Demonstration of Ultra-Fast Switching in Nanometallic Resistive Switching Memory Devices

Figure 1

(a) Top view SEM image of devices ranging from 512 × 512 μm2 to 100 × 100 nm2. (b) Planar view TEM image of 93% SiN4/3:7% Pt films. Dark regions are clustered Pt nanoparticles (<1 nm). (c) The schematic for fabricated Mo/Si3N4:Pt/Pt devices and the experimental setup.

We are committed to sharing findings related to COVID-19 as quickly and safely as possible. Any author submitting a COVID-19 paper should notify us at to ensure their research is fast-tracked and made available on a preprint server as soon as possible. We will be providing unlimited waivers of publication charges for accepted articles related to COVID-19. Sign up here as a reviewer to help fast-track new submissions.