Demonstration of Ultra-Fast Switching in Nanometallic Resistive Switching Memory Devices

<div>(a) Equivalent circuit: device structure composed of electrode resistor <svg height="11.8174pt" id="M30" style="vertical-align:-3.1815pt" version="1.1" viewbox="-0.0498162 -8.6359 19.4466 11.8174" width="19.4466pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M610 18C585 26 567 34 540 68C517 97 499 128 476 171C452 215 425 276 413 304C496 332 570 394 570 494C570 555 545 595 509 619S419 650 364 650H139L133 622C216 615 219 612 203 527L129 132C112 40 105 36 23 28L17 0H279L285 28C199 34 194 40 211 132L239 284H284C320 284 334 275 351 236C374 182 394 140 420 93C459 23 495 -1 592 -8H600L610 18ZM480 485C480 424 449 372 403 342C374 323 338 316 293 316H245L291 562C296 589 301 601 311 608S337 618 358 618C432 618 480 575 480 485Z" id="g113-83"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="627" vert-adv-y="627"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,8.086,3.132)"><path d="M384 354C435 370 515 408 515 502C515 549 494 593 459 616C426 639 384 650 308 650H45V618C127 613 130 606 130 524V127C130 45 125 38 37 33V0H262C342 0 409 12 461 40C521 73 558 124 558 192C558 295 481 336 384 352V354ZM217 365V556C217 587 221 597 229 604C238 611 261 615 288 615C382 615 421 558 421 490C421 406 374 365 266 365H217ZM217 327H264C384 327 457 284 457 183C457 80 383 38 301 38C235 38 217 55 217 127V327Z" id="g58-64"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="598" vert-adv-y="598"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,13.5,3.132)"><path d="M522 166C507 123 488 90 472 71C449 44 419 38 347 38C296 38 261 38 242 51C223 63 217 85 217 132V315H311C398 315 406 310 419 239H453V433H419C406 365 401 358 311 358H217V580C217 609 219 612 251 612H331C400 612 427 604 440 584C453 561 463 541 472 498L506 502C501 558 497 627 497 650H43V618C122 610 130 609 130 520V128C130 46 121 40 30 32V0H521C529 30 552 128 557 162L522 166Z" id="g58-67"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="580" vert-adv-y="580"></glyph.data></g></svg> (mostly due to spreading resistance in bottom electrode) serially connected to a set of parallel cell resistance <svg height="11.9316pt" id="M31" style="vertical-align:-3.2957pt" version="1.1" viewbox="-0.0498162 -8.6359 21.383 11.9316" width="21.383pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M610 18C585 26 567 34 540 68C517 97 499 128 476 171C452 215 425 276 413 304C496 332 570 394 570 494C570 555 545 595 509 619S419 650 364 650H139L133 622C216 615 219 612 203 527L129 132C112 40 105 36 23 28L17 0H279L285 28C199 34 194 40 211 132L239 284H284C320 284 334 275 351 236C374 182 394 140 420 93C459 23 495 -1 592 -8H600L610 18ZM480 485C480 424 449 372 403 342C374 323 338 316 293 316H245L291 562C296 589 301 601 311 608S337 618 358 618C432 618 480 575 480 485Z" id="g113-83"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="627" vert-adv-y="627"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,8.086,3.132)"><path d="M396 114C349 71 317 59 274 59C216 59 123 104 123 241C123 342 180 400 246 400C283 400 317 386 348 359C355 352 361 348 366 348C378 348 401 371 402 394C402 405 398 413 385 424C369 437 337 451 294 451H293C254 451 193 434 141 394C73 342 39 277 39 198C39 90 114 -12 243 -12C303 -12 371 31 415 90L396 114Z" id="g58-97"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="432" vert-adv-y="432"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,12.017,3.132)"><path d="M384 109C349 76 310 59 268 59C197 59 123 113 120 245C240 248 367 259 384 262C403 266 407 275 407 296C407 376 338 451 254 451H253C201 451 148 425 105 378C65 334 39 272 39 203C39 88 112 -12 235 -12C266 -12 339 5 402 84L384 109ZM230 411C285 411 319 365 319 313C319 298 313 293 294 293C236 291 180 290 125 290C141 370 185 411 230 411Z" id="g58-99"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="434" vert-adv-y="434"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,15.93,3.132)"><path d="M244 0V30C178 35 170 41 170 107V710C136 697 72 680 18 675V647C83 642 89 639 89 572V107C89 43 80 35 16 30V0H244Z" id="g58-106"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="260" vert-adv-y="260"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,18.342,3.132)"><path d="M244 0V30C178 35 170 41 170 107V710C136 697 72 680 18 675V647C83 642 89 639 89 572V107C89 43 80 35 16 30V0H244Z" id="g58-106"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="260" vert-adv-y="260"></glyph.data></g></svg> and cell capacitance <svg height="8.8423pt" id="M32" style="vertical-align:-0.2064009pt" version="1.1" viewbox="-0.0498162 -8.6359 8.8162 8.8423" width="8.8162pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M645 631C614 643 545 666 457 666C215 666 23 519 23 283C23 90 158 -16 337 -16C412 -16 489 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Apparent voltage <svg height="8.8423pt" id="M33" style="vertical-align:-0.2064009pt" version="1.1" viewbox="-0.0498162 -8.6359 9.35121 8.8423" width="9.35121pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="709" vert-adv-y="709"></glyph.data></g></svg> is larger than the actual cell voltage <svg height="11.9316pt" id="M34" style="vertical-align:-3.2957pt" version="1.1" viewbox="-0.0498162 -8.6359 20.6262 11.9316" width="20.6262pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="709" vert-adv-y="709"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,7.332,3.132)"><path d="M396 114C349 71 317 59 274 59C216 59 123 104 123 241C123 342 180 400 246 400C283 400 317 386 348 359C355 352 361 348 366 348C378 348 401 371 402 394C402 405 398 413 385 424C369 437 337 451 294 451H293C254 451 193 434 141 394C73 342 39 277 39 198C39 90 114 -12 243 -12C303 -12 371 31 415 90L396 114Z" id="g58-97"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="432" vert-adv-y="432"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,11.263,3.132)"><path d="M384 109C349 76 310 59 268 59C197 59 123 113 120 245C240 248 367 259 384 262C403 266 407 275 407 296C407 376 338 451 254 451H253C201 451 148 425 105 378C65 334 39 272 39 203C39 88 112 -12 235 -12C266 -12 339 5 402 84L384 109ZM230 411C285 411 319 365 319 313C319 298 313 293 294 293C236 291 180 290 125 290C141 370 185 411 230 411Z" id="g58-99"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="434" vert-adv-y="434"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,15.176,3.132)"><path d="M244 0V30C178 35 170 41 170 107V710C136 697 72 680 18 675V647C83 642 89 639 89 572V107C89 43 80 35 16 30V0H244Z" id="g58-106"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="260" vert-adv-y="260"></glyph.data></g><g transform="matrix(.0091,0,0,-0.0091,17.588,3.132)"><path d="M244 0V30C178 35 170 41 170 107V710C136 697 72 680 18 675V647C83 642 89 639 89 572V107C89 43 80 35 16 30V0H244Z" id="g58-106"></path><glyph.data ascent="1007" descent="-369" horiz-adv-x="260" vert-adv-y="260"></glyph.data></g></svg>. (b) Simulated on → off switching voltage<i> versus</i> pulse widths for various device sizes. (c) Simulated off → on switching voltage<i> versus</i> pulse widths for various device sizes.</div>

Journal of Nanoscience

fig4

Figure 4

Figure 4: Demonstration of Ultra-Fast Switching in Nanometallic Resistive Switching Memory Devices 