Journal of Nanoscience / 2016 / Article / Fig 4

Research Article

Demonstration of Ultra-Fast Switching in Nanometallic Resistive Switching Memory Devices

Figure 4

(a) Equivalent circuit: device structure composed of electrode resistor (mostly due to spreading resistance in bottom electrode) serially connected to a set of parallel cell resistance and cell capacitance . Apparent voltage is larger than the actual cell voltage . (b) Simulated on → off switching voltage versus pulse widths for various device sizes. (c) Simulated off → on switching voltage versus pulse widths for various device sizes.
(a)
(b)
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