Table of Contents
Journal of Nanoscience
Volume 2017, Article ID 2409062, 9 pages
https://doi.org/10.1155/2017/2409062
Research Article

Spreadability of Ag Layer on Oxides and High Performance of AZO/Ag/AZO Sandwiched Transparent Conductive Film

1Co-Innovation Center for Green Building, Shandong Jianzhu University, Jinan 250101, China
2School of Materiel Science and Engineering, Shandong Jianzhu University, Jinan 250101, China
3The Key Laboratory for Liquid-Solid Structural Evolution & Processing of Materials, Ministry Education, Shandong University, Jinan 250061, China
4Shandong Yucheng Hanneng Solar Power Co., Ltd, Shandong, Yucheng 251200, China

Correspondence should be addressed to Weimin Wang; nc.ude.uds@wnimiew

Received 3 April 2017; Accepted 12 June 2017; Published 25 July 2017

Academic Editor: Zhengjun Zhang

Copyright © 2017 Yuchao Niu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Single layers of indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), and Ag, bilayers of ITO/Ag and AZO/Ag, and sandwiched layers of ITO/Ag/ITO (IAI) and AZO/Ag/AZO (ZAZ) were fabricated on ordinary glass substrates using magnetron sputtering. The surface morphologies of single layers and bilayers were measured. The sheet resistance and transmittance of the sandwiched layers were investigated. The results showed that the spreadability of the Ag on the AZO was significantly better than that on the ITO or bare glass substrate. The spreadability of Ag on underlayers influences obviously the performance of transparent conductive oxide/Ag/transparent conductive oxides (TCO/Ag/TCO or TAT). The sheet resistance and transmittance of the ZAZ sandwiched layer with the matching of 35 nm AZO (35 nm)/Ag (9 nm)/AZO (35 nm) fabricated in this paper were low to 3.84 Ω/sq and up to 85.55% at 550 nm, respectively. Its maximum Haacke figure of merit was 0.05469 Ω−1, higher than that of IAI multilayer.