Table of Contents
Journal of Solar Energy
Volume 2017, Article ID 5821041, 7 pages
Research Article

Direct Current Sputter Epitaxy of Heavily Doped p+ Layer for Monocrystalline Si Solar Cells

Interdisciplinary Graduate School of Science and Engineering, Shimane University, Nishikawatsu-cho 1060, Matsue 690-8504, Japan

Correspondence should be addressed to Wenchang Yeh;

Received 21 September 2016; Accepted 15 March 2017; Published 7 May 2017

Academic Editor: Sundaram Senthilarasu

Copyright © 2017 Wenchang Yeh and Hikaru Moriyama. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Sputter epitaxy of p+ layer for fabrication of Si solar cells (SCs) was demonstrated. Hall carrier concentration of p+ layer was 2.6 × 1020 cm−3 owing to cosputtering of B with Si at low temperature, which had enabled heavy and shallow p+ dope layer. p+nn+ SCs were fabricated and influence of p+ and n+ layers was investigated. Internal quantum efficiency (IQE) of p+nn+ SCs was 95% at visible light and was larger than 60% at ultraviolet (UV) light when the p+ layer was thinner than 30 nm. At near infrared (NIR), extra increment on IQE was achieved by rear n+ back surface field (BSF) layer with a thickness thinner than 100 nm.