Table of Contents
Journal of Solar Energy
Volume 2017, Article ID 5821041, 7 pages
https://doi.org/10.1155/2017/5821041
Research Article

Direct Current Sputter Epitaxy of Heavily Doped p+ Layer for Monocrystalline Si Solar Cells

Interdisciplinary Graduate School of Science and Engineering, Shimane University, Nishikawatsu-cho 1060, Matsue 690-8504, Japan

Correspondence should be addressed to Wenchang Yeh; pj.ca.u-enamihs.okir@hey

Received 21 September 2016; Accepted 15 March 2017; Published 7 May 2017

Academic Editor: Sundaram Senthilarasu

Copyright © 2017 Wenchang Yeh and Hikaru Moriyama. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Wenchang Yeh and Hikaru Moriyama, “Direct Current Sputter Epitaxy of Heavily Doped p+ Layer for Monocrystalline Si Solar Cells,” Journal of Solar Energy, vol. 2017, Article ID 5821041, 7 pages, 2017. https://doi.org/10.1155/2017/5821041.