Direct Current Sputter Epitaxy of Heavily Doped p⁺ Layer for Monocrystalline Si Solar Cells

Figure 5

(a) J-V characteristics of p⁺nn⁺ SCs before and after annealing at 400°C, 600°C, and 800°C. (b) IQE and of these SCs.

(a)

(b)