Table of Contents
Journal of Solid State Physics
Volume 2014, Article ID 291469, 19 pages
Review Article

Optical Measurement Techniques of Recombination Lifetime Based on the Free Carriers Absorption Effect

Dipartimento di Ingegneria Elettrica e delle Tecnologie dell'Informazione, Università degli Studi di Napoli “Federico II”, Via Claudio, 21, 80125 Napoli, Italy

Received 15 November 2013; Revised 21 February 2014; Accepted 3 April 2014; Published 24 June 2014

Academic Editor: George Cirlin

Copyright © 2014 Martina De Laurentis and Andrea Irace. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We review successful measurement techniques for the evaluation of the recombination properties in semiconductor materials based on the optically induced free carrier absorption. All the methodologies presented share the common feature of exploiting a laser beam to excite electron-hole pairs within the volume of the sample under investigation, while the probing methods can vary according to the different methodology analyzed. As recombination properties are of paramount importance in determining the properties of semiconductor devices (i.e, bipolar transistor gain, power devices switching features, and solar cells efficiency), their knowledge allows for better understanding of experimental results and robust TCAD simulator calibration. Being contactless and applicable without any particular preparation of the sample under investigation, they have been considered attractive to monitor these parameters inline or just after production of many different semiconductor devices.