Table of Contents
Journal of Solid State Physics
Volume 2014, Article ID 585701, 4 pages
Research Article

Preparation and Electrical Properties of Ba2TiOSi2−xGexO7 ( and ) Ferroelectric Ceramics

1Materials Science Laboratory, Department of Physics, J.N. Vyas University, Jodhpur, Rajasthan 342001, India
2Materials Science Laboratory, Department of Physics, M.L. Sukhadia University, Udaipur, Rajasthan 313002, India

Received 11 April 2014; Revised 23 June 2014; Accepted 24 June 2014; Published 14 July 2014

Academic Editor: Ya Cheng

Copyright © 2014 S. K. Barbar and M. Roy. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Polycrystalline ceramic samples of pure and germanium (Ge4+) doped fresnoite of general formula Ba2TiOSi2−xGexO7 ( and 0.2) have been prepared by solid state reaction technique. The formation of the single phase compound was confirmed by X-ray diffraction and the structural parameters were refined by the Rietveld refinement technique. The dc conductivity of both the materials has been measured as a function of temperature from room temperature to 753 K and activation energy was calculated using the relation . The activation energy 4.74 eV obtained for the pure compound is very high in comparison with 1.47 eV of Ge4+-substituted compound. The frequency and temperature dependent dielectric behavior of both the compounds have been studied. The real and imaginary parts of the dielectric constant increase with the increase of temperature.