Table of Contents
Laser Chemistry
Volume 15, Issue 2-4, Pages 83-92
http://dx.doi.org/10.1155/1995/94175

Emission and Relaxation of Electronically Excited O2 Doped in a Low Temperature N2 Crystal

Department of Chemical Engineering, Faculty of Engineering, The University of Tokyo Hongo, Bunkyo-ku, Tokyo 113, Japan

Received 14 March 1994

Copyright © 1995 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Oxygen molecules doped in a low temperature N2 crystal were irradiated at 240-260 nm. Two emission band systems were observed, one from the v′ = 0 level of A′ 3Δu state to X3Σg-. state and the other, from the v′ = 0 level of c1Σu-. state to at a1Δg state, independent on the excitation wave length. The latter emission grew together with the decay of the former emission at around the same rate after the pulsed laser excitation, which implies that the vibrational levels of c state lying below the v′ = 0 level of Ω = 3 of A′ state are populated from the v′ = level of A′ state, though some additional mechanism for populating the c state may exist. The rate was found to become larger with the increase of the crystal temperature. It was also found that the excitation spectrum obtained by monitoring the A′–X emission was the same as that obtained by the c–a emission. The progress of vibrational relaxation, coupling with the intersystem crossing between the Herzberg states, will be discussed.