Table of Contents
Laser Chemistry
Volume 2008, Article ID 892721, 4 pages
Research Article

Three-Dimensional Residue-Free Volume Removal inside Sapphire by High-Temperature Etching after Irradiation of Femtosecond Laser Pulses

Department of Ecosystem Engineering, The University of Tokushima, 2-1 Minamijosanjimacho, Tokushima 770-8506, Japan

Received 4 June 2008; Accepted 29 August 2008

Academic Editor: Stavros Pissadakis

Copyright © 2008 Shigeki Matsuo et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We applied the femtosecond laser-assisted etching technique, that is, irradiation of focused femtosecond laser pulses followed by selective chemical etching, to volume removal inside sapphire. At room temperature, volume etching only slightly advanced while residue remained inside the volume. By increasing the etching temperature, complete volume etching without residue was achieved. Complete etching was, however, accompanied by undesirable phenomena of surface pits or cracks, which are expected to be excluded through further improvement of processing.