Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

Figure 10

(a) Photograph of two double-sided YBCO wafers on 71×75 mm² 𝑟-plane sapphire substrates with CeO₂ buffer layers. Obvious is the mirror-like, homogeneous appearance of the YBCO films. (b) Mapping of the critical current density (77 K) of such a 71×75 mm² YBCO wafer with two YBCO films at both wafer sides, demonstrating the very good homogeneity of 𝑗_c using the “𝑗_c-scan Leipzig.” As much as 15 consecutively deposited 71×75 mm² YBCO wafers showed such excellent 𝑗_c-homogeneity, indicating a high reproducibility of the “space qualified” large-area PLD process [9–11].

(a)

(b)