Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

Figure 13

Variation of the free charge carrier density and the mobility determined by Hall-effect measurements over the substrate, as shown in Figure 11. The data point of the carrier concentration at 10 mm distance is slightly shifted horizontally to avoid overlap.