Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

<table>Five reflectivity spectra calculated using a layer stack model from the experimental ellipsometry data taken at the indicated radial positions on the 3-inch diameter Bragg structure on Si(100) wafer. The maximum reflectivity at the BR stop band energy with perpendicular incidence is 99.7%.</table>

Laser Chemistry

fig15

Figure 15

Figure 15: Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition 

Figure 15 | Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition 