Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition
Figure 16
Photograph of the 3-inch diameter Al2O2/YSZ Bragg mirror on Si (100) (a) and radial scan of the center energy of the Bragg reflector stop bands (b). The position 0 cm is the wafer center. Within a diameter of 3 cm, the center energy is shifted by only 0.4% and within 4 cm diameter by 1.3%. The thickness of one layer pair is at the wafer center (0 cm) 93.3 nm, at 1 cm distance from center 93.6 nm, and at 2 cm distance 91.8 nm.
