Figure 17: Typical resistivity and free carrier concentration of n-type conducting undoped ZnO, and Al-, Ga-, Mg-, and Cd-doped ZnO thin films on 1 0 × 1 0  mm² sapphire substrates taken from Hall measurements at 300 K and 0.4 Tesla. The given dopant concentrations are the initial concentrations in the PLD source targets. The line is drawn to guide the eye only. See [44] for additional information.