Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition
Figure 17
Typical resistivity and free carrier concentration of n-type conducting undoped ZnO, and Al-, Ga-, Mg-, and Cd-doped ZnO thin films on mm² sapphire substrates taken from Hall measurements at 300 K and 0.4 Tesla. The given dopant concentrations are the initial concentrations in the PLD source targets. The line is drawn to guide the eye only. See [44] for additional information.
