Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

Figure 18

(a) PLD Ba_xSr_1−x TiO₃ capacitor structures on microwave ceramic substrates (CoorsTek SUP 996 Hirel, 50×50×0.635 mm³, A-face: R_a∼21 nm) with DC sputtered 3 mm diameter gold (G1072) or platinum (G1017) electrodes ~150 nm thick. The nominal thickness of the dielectric film is 1 to 2 μm. (b) Self-made temperature controller platform with adjustable top contacts for the large-area 50×50 mm² capacitor structures. The water cooled Peltier element enables a temperature sweep from −35°C up to +85°C.

(a)

(b)