140976.fig.0023a
(a)
140976.fig.0023b
(b)
140976.fig.0023c
(c)
140976.fig.0023d
(d)
Figure 23: Effect of Mg (a, b) and Ti (c, d) doping of the BTO dielectric on capacity (a, c) and 𝑄 value (b, d) of Pt/BTO: Mg,Ti/Pt thin film capacitors. The Ti-doped capacitor (c, d) is postannealed in oxygen which improved the 𝑄 value by at least a factor of four.