Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

<table>Effect of Mg (a, b) and Ti (c, d) doping of the BTO dielectric on capacity (a, c) and <svg height="11.6" id="M95" style="vertical-align:-1.71pt" version="1.1" viewbox="0 0 11.0625 11.6" width="11.0625" xmlns="http://www.w3.org/2000/svg">
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<tspan style="font-size: 11.21px; " x="0" y="0">𝑄</tspan>
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</svg> value (b, d) of Pt/BTO: Mg,Ti/Pt thin film capacitors. The Ti-doped capacitor (c, d) is postannealed in oxygen which improved the <svg height="11.6" id="M96" style="vertical-align:-1.71pt" version="1.1" viewbox="0 0 11.0625 11.6" width="11.0625" xmlns="http://www.w3.org/2000/svg">
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<g transform="translate(72,-62.72)">
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<tspan style="font-size: 11.21px; " x="0" y="0">𝑄</tspan>
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</svg> value by at least a factor of four.</table>

Laser Chemistry

fig23

Figure 23

Figure 23: Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition 

Figure 23 | Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition 