Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

<table>Phase shift at 10 GHz by transmission through a coplanar microwave line (made of gold) on BSTO-0.45 thin film at −25°C. The line width is 200 <i>μ</i>m, and the gap to the grounded areas is 10 <i>μ</i>m (red curve) and 5 <i>μ</i>m (black curve); see inset. The Curie temperature of BSTO-0.45 is below −50°C and therefore shows a weak tunability of phase shift at +25°C.</table>

Laser Chemistry

fig24

Figure 24

Figure 24: Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition 

Figure 24 | Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition 