Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

<table>PL-spectra of MgZnO/ZnO QW grown by PLD at high fluence (2.4 J/cm<sup>2</sup>, red line) and low fluence (1.8 J/cm<sup>2</sup>, blue line). The donor bound excitonic emission (D<sup>0</sup>X) of bulk ZnO is indicated by a black line, and the QW emission is marked in the spectra. The quantum well grown at low laser fluence shows the quantum confined Stark effect due to improved interface sharpness, while the other does not.</table>

Laser Chemistry

fig31

Figure 31

Figure 31: Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition 

Figure 31 | Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition 