Research Article

Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

Figure 35

AFM image of an STO thin film at 𝑇 s u b 7 0 0 °C, p(O2) = 0.002 mbar, and 𝐹 1 . 9  J/cm2 on a pre- treated STO (100) substrate. The thickness of the STO thin film is about 95 nm.
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