Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

Table 2

Typical microstructural and superconducting properties of double-sided 3-inch diameter PLD-YBCO films on sapphire with CeO₂ buffer layer [10]. Microwave measurements were done in Wuppertal [63] and Karlsruhe [70, 71].

Property	Typical value
YBCO-thickness 𝑑YBCO.	(230±30) nm
C-axis lattice constant c.	(11.659±0.006) Å
A-axis lattice constant a.	(3.829±0.003) Å
Orthorhombic splitting; (b-a)/a.	(1.52±0.05)%
Percentage of a-axis; oriented grains.	0 to 0.5%
In-plane epitaxially oriented film; area to total illuminated area in; Raman spectroscopy.	75 to 94 %
Critical temperature 𝑇c.	87.5 to 90 K
Critical current density 𝑗c; at 77 K and 𝐵=0.	3.5 to 5.5 MA/cm^2
Surface resistance 𝑅s; at 10 GHz and 77 K.	500 to 600 μΩ
Microwave surface magnetic; field𝐵s at 8.5 GHz and 77 K for 𝑅s + 20% [63].	8 to 10 mT
Surface resistance 𝑅s at 145 GHz and 77 K [70].	40 to 60 mΩ