Table of Contents
Research Letters in Physics
Volume 2008, Article ID 286546, 5 pages
http://dx.doi.org/10.1155/2008/286546
Research Letter

Current Tunnelling in MOS Devices with Al2O3/SiO2 Gate Dielectric

1Unité de Recherche de Physique des Solides, Département de Physique, Faculté des Sciences de Monastir, Monastir 5019, Tunisia
2Laboratoire de Physique de La Matière, UMR-CNRS 5511, INSA De Lyon, Bâtement 502, 20 Avenue Albert Einstein, Villeurbanne Cedex 69621, France

Received 10 October 2007; Accepted 8 January 2008

Academic Editor: Anil R. Chourasia

Copyright © 2008 A. Bouazra et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

A. Bouazra, S. Abdi-Ben Nasrallah, M. Said, and A. Poncet, “Current Tunnelling in MOS Devices with Gate Dielectric,” Research Letters in Physics, vol. 2008, Article ID 286546, 5 pages, 2008. https://doi.org/10.1155/2008/286546.