Table of Contents
Research Letters in Physics
Volume 2008 (2008), Article ID 681397, 4 pages
http://dx.doi.org/10.1155/2008/681397
Research Letter

Polarization Insensibility of Columnar Quantum Dot Structure Emitting at 𝝀 = 𝟏 . 𝟓 𝟓 𝝁 m : A Theoretical Study

FOTON-INSA Laboratory, CNRS UMR 6082, INSA de Rennes, 20 avenue des Buttes de Coësmess, CS 14315, 35043 Rennes Cedex, France

Received 20 May 2008; Accepted 6 August 2008

Academic Editor: Rajeev Ahuja

Copyright © 2008 J. Even and L. Pedesseau. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. T. Kita, P. Jayavel, O. Wada, H. Ebe, Y. Nakata, and M. Sugawara, “Polarization controlled edge emission from columnar InAs/GaAs self-assembled quantum dots,” Physica Status Solidi (C), vol. 0, no. 4, pp. 1137–1140, 2003. View at Publisher · View at Google Scholar
  2. T. Saito, T. Nakaoka, T. Kakitsuka, Y. Yoshikuni, and Y. Arakawa, “Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0–6 nm,” Physica E, vol. 26, no. 1–4, pp. 217–221, 2005. View at Publisher · View at Google Scholar
  3. K. Kawaguchi, M. Ekawa, N. Yasuoka et al., “1.3–1.6 μm broadband polarization-independent luminescence by columnar InAs quantum dots on InP(001),” Physica Status Solidi (C), vol. 3, no. 11, pp. 3646–3651, 2006. View at Publisher · View at Google Scholar
  4. C. Cornet, C. Levallois, P. Caroff et al., “Impact of the capping layers on lateral confinement in InAsInP quantum dots for 1.55μm laser applications studied by magnetophotoluminescence,” Applied Physics Letters, vol. 87, no. 23, Article ID 233111, 3 pages, 2005. View at Publisher · View at Google Scholar
  5. C. Cornet, C. Labbé, H. Folliot et al., “Time-resolved pump probe of 1.55 μm InAs/InP quantum dots under high resonant excitation,” Applied Physics Letters, vol. 88, no. 17, Article ID 171502, 3 pages, 2006. View at Publisher · View at Google Scholar
  6. C. Cornet, M. Hayne, P. Caroff et al., “Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots,” Physical Review B, vol. 74, no. 24, Article ID 245315, 10 pages, 2006. View at Publisher · View at Google Scholar
  7. E. Homeyer, R. Piron, F. Grillot et al., “Demonstration of a low threshold current in 1.54 μm InAs/InP(311)B quantum dot laser with reduced quantum dot stacks,” Japanese Journal of Applied Physics, vol. 46, no. 10A, part 1, pp. 6903–6905, 2007. View at Publisher · View at Google Scholar
  8. K. Veselinov, F. Grillot, C. Cornet et al., “Analysis of the double laser emission occurring in 1.55 μm InAs/InP (113)B quantum-dot lasers,” IEEE Journal of Quantum Electronics, vol. 43, no. 9, pp. 810–816, 2007. View at Publisher · View at Google Scholar
  9. C. Cornet, A. Schliwa, J. Even et al., “Electronic and optical properties of InAs/InP quantum dots on InP(100) and InP(311)B substrates: theory and experiment,” Physical Review B, vol. 74, no. 3, Article ID 035312, 9 pages, 2006. View at Publisher · View at Google Scholar
  10. J. Even, F. Doré, C. Cornet, L. Pedesseau, A. Schliwa, and D. Bimberg, “Semianalytical evaluation of linear and nonlinear piezoelectric potentials for quantum nanostructures with axial symmetry,” Applied Physics Letters, vol. 91, no. 12, Article ID 122112, 3 pages, 2007. View at Publisher · View at Google Scholar
  11. J. Even, F. Doré, C. Cornet, and L. Pedesseau, “Semianalytical model for simulation of electronic properties of narrow-gap strained semiconductor quantum nanostructures,” Physical Review B, vol. 77, no. 8, Article ID 085305, 6 pages, 2008. View at Publisher · View at Google Scholar
  12. Femlab 3.2 software, Trademark of Comsol AB, 2005.