Table of Contents
Research Letters in Physics
Volume 2008, Article ID 786939, 4 pages
Research Letter

Differential Gain in InGaAsN/GaAs Double Quantum Well Structures by Numerical Simulations

1Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, ON, Canada N2L 3C5
2Department of Physics, Royal Military College, Kingston, ON, Canada K7K 7B4
3Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Poland

Received 19 March 2008; Accepted 7 June 2008

Academic Editor: Doerte Blume

Copyright © 2008 M. S. Wartak et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We performed numerical studies of differential gain in a coupled quantum well structures built from InGaAsN. Differential gain in In0.38Ga0.62As1_š‘¦Nš‘¦/GaAs quantum well structures was determined and analyzed. A 10-band š‘˜_š‘ Hamiltonian matrix was used in the calculations and solved self-consistently with Poisson's equation. The effect of Nitrogen composition and barrier thickness on differential gain has been determined. The influence of Nitrogen composition on differential gain is significant whereas barrier effects are modest.