Observation of Quantum Confinement 
                        Effects with <?layout cmd="newline"?> Ultrashort Excitation in the Vicinity 
                        of Direct Critical Points <?layout cmd="newline"?> in Silicon Nanofilms

<table>Degenerate time-resolved absorption measurements
of the nanofilms where the apparent
state filling is due to occupation of surface states located below the Γ<sub>1</sub> point. The inset shows the critical
points for the nanofilms obtained using ellipsometry measurements [<a href="/journals/physri/2008/837503/#B9">9</a>].</table>

Physics Research International

fig3

Figure 3

Figure 3: Observation of Quantum Confinement 
                        Effects with <?layout cmd="newline"?> Ultrashort Excitation in the Vicinity 
                        of Direct Critical Points <?layout cmd="newline"?> in Silicon Nanofilms 

Figure 3 | Observation of Quantum Confinement 
                        Effects with  Ultrashort Excitation in the Vicinity 
                        of Direct Critical Points  in Silicon Nanofilms 

Physics Research International

Observation of Quantum Confinement Effects with Ultrashort Excitation in the Vicinity of Direct Critical Points in Silicon Nanofilms

Figure 3