Table of Contents
Research Letters in Physics
Volume 2009, Article ID 594175, 4 pages
Research Letter

Evaluation of the Thickness in Nanolayers Using the Transfer Matrix Method for Modeling the Spectral Reflectivity

1Department of Physics and Mathematics, Autonomous University of Aguascalientes, Avenue Universidad # 940, Ciudad Universitaria, C. P. 20100 Aguascalientes, AGS, Mexico
2Department of General Physics, Faculty of Physics, University of Havana, 10400 La Habana, Cuba
3Institute of Sciences and Technology of the Materials, University of Havana, 10400 La Habana, Cuba

Received 3 December 2008; Accepted 13 February 2009

Academic Editor: Lian Gao

Copyright © 2009 Juan E. González-Ramírez et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The reflectivity spectra have been traditionally used to determine the thicknesses in semiconductor films. However, thicknesses of nanofilms are not easy to evaluate because the interference fringes are not visible in the transparent region. In this paper, we present a computed method based on the transfer matrix (TM) which is used to match the calculated and experimental room temperature reflectivity spectra of the ZnTe/GaAs films and to determine its thickness film values afterwards. The TM method needs only to know refraction indices and absorption coefficients as a function of wavelength for the film and the substrate. The thickness nanofilms evaluated by our method are in agreement with the values measured by ellipsometry, Rutherford backscattering spectroscopy and transmission electron microscopy techniques. The present procedure extends the application of the standard spectral reflectance technique to determine semiconductor nanolayer thicknesses.