Research Article
Development of Laser-Produced Tin Plasma-Based EUV Light Source Technology for HVM EUV Lithography
Table 1
Target specification of EUV source, GL200E for HVM.
| Model number | Units | Gigaphoton GL200E |
| EUV clean power (at I/F) | W | 250 (in-band; after filtering IR and DUV) | EUV pulse energy (at I/F) | mJ | ~2.5 | Max. rep. rate | kHz | ~100 | Max. CO2 laser system | kW | 20 (100 kHz, 200 mJ/pulse) | Target material and shape | | Liquid Sn droplet, spherical | Droplet size (diameter) | m | 10–30 | Plasma creation scheme | | Double-pulse laser shooting | Debris mitigation scheme | | Hybrid: magnetic field guiding and chemical etching |
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