Table of Contents
Physics Research International
Volume 2014 (2014), Article ID 464809, 5 pages
http://dx.doi.org/10.1155/2014/464809
Research Article

Synthesis and Characterization of Screen Printed Zn0.97Cu0.03O Thick Film for Semiconductor Device Applications

1Department of Physics, Jamia Millia Islamia, New Delhi 110025, India
2CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India

Received 25 August 2014; Accepted 3 November 2014; Published 24 November 2014

Academic Editor: Lorenzo Pavesi

Copyright © 2014 Rayees Ahmad Zargar et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The studies on doped ZnO thick films deposited over large surface area are still a very promising area of research and development. We report characteristic properties of thick film of Zn0.97Cu0.03O prepared by the economic screen printing technique. The film was characterized by XRD, SEM, diffused reflectance, FTIR, and dark resistivity measurement techniques. The XRD and SEM studies revealed polycrystalline, single phase, porous, and granular surface morphology of this Cu doped ZnO thick films. The direct band gap energy of this film determined by diffuse reflectance technique is 3.18 eV. IR transmission spectrum measured in 4000–600 cm−1 region at ambient temperature confirmed the incorporation of Cu2+ ions in ZnO lattice. The DC resistivity measurements reveal semiconducting nature of the sample with activation energy of 0.66 eV.