Structural and Optical Investigations of Heterostructures Based on Al_𝑥Ga_1−𝑥As_𝑦P_1−𝑦:Si Solid Solutions Obtained by MOCVD

Figure 2

Raman backscattering spectra of the Al_xGa_1−xAs_yP_1−y:Si/GaAs (100) heterostructures. (a) EM2350: GaAs; (b) EM2346: Al_0.26Ga_0.74As; EM2438: Al_0.22Ga_0.78As:Si (10⁻⁵); EM2449: (Al_0.20Ga_0.80As)_0.999Si_0.001; (c) EM2342: Al_0.35Ga_0.65As_0.9999P_0.0001:Si (10⁻⁵); EM2343: Al_0.35Ga_0.65As_0.9999P_0.0001:Si (10⁻⁵); EM2355: (Al_0.426Ga_0.574As_0.975P_0.025)_0.999Si_0.001; EM2356: (Al_0.43Ga_0.57As_0.977P_0.023)_0.997Si_0.003.

(a)

(b)

(c)