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Physics Research International
/
2014
/
Article
/
Tab 1
/
Research Article
Structural and Optical Investigations of Heterostructures Based on
:Si Solid Solutions Obtained by MOCVD
Table 1
Composition and growth condition of
:Si heterostructures.
Sample
Composition,
Flow SiH
4
cm
3
/min
Carrier concentration, cm
−3
As/P
EM2350
GaAs
800
—
—
EM2346
x
~0.30
800
—
—
EM2438
x
~0.25
700
10
—
EM2449
x
~0.25
800
100
—
EM2342
x
~0.40,
y
~0.98-0.99
800
100
30
EM2343
x
~0.40,
y
~0.98-0.99
800
200
30
EM2355
x
~0.50,
y
~0.98-0.99
800
200
30
EM2356
x
~0.50,
y
~0.98-0.99
800
300
30