Structural and Optical Investigations of Heterostructures Based on Al_𝑥Ga_1−𝑥As_𝑦P_1−𝑦:Si Solid Solutions Obtained by MOCVD

Table 1

Composition and growth condition of Al_𝑥Ga_1−𝑥As_𝑦P_1−𝑦:Si heterostructures.

Sample	Composition,; 𝑥,𝑦	𝑇	Flow SiH4; cm^3/min	Carrier concentration, cm^−3	As/P
EM2350	GaAs	800	—	3.6×10^16	—
EM2346	x~0.30	800	—	3.1×10^16	—
EM2438	x~0.25	700	10	3.4×10^17	—
EM2449	x~0.25	800	100	6.5×10^17	—
EM2342	x~0.40, y~0.98-0.99	800	100	7.85×10^17	30
EM2343	x~0.40, y~0.98-0.99	800	200	8.19×10^17	30
EM2355	x~0.50, y~0.98-0.99	800	200	7.07×10^17	30
EM2356	x~0.50, y~0.98-0.99	800	300	4.56×10^17	30