Structural and Optical Investigations of Heterostructures Based on Al_𝑥Ga_1−𝑥As_𝑦P_1−𝑦:Si Solid Solutions Obtained by MOCVD

Table 4

Frequencies of active Raman mode in spectra of Al_𝑥Ga_1−𝑥As_𝑦P_1−𝑦:Si heterostructures.

Sample	GaAs; 𝜔LO/𝜔TO,; cm^−1	AlAs; 𝜔LO/𝜔TO,; cm^−1	GaP; 𝜔LO,; cm^−1	𝜔 LA(L),; cm^−1	Si-like,; cm^−1
EM2350
GaAs; 𝑇=800; flow = 0; carrier = 3.6×10^16	291/267	—	—	—	—
EM2346
Al0.26Ga0.74As; 𝑇=800; flow = 0; carrier = 3.1×10^16	279/263	376/358	—	197	—
EM2438
Al0.22Ga0.78As:Si(10^−5); 𝑇=700; flow = 10; carrier = 3.4×10^17	278/262	360	—	197	—
EM2449
(Al0.20Ga0.80As)0.999Si0.001; 𝑇=800; flow = 100; carrier = 6.5×10^17	279/263	379	—	196	—
EM2342
Al0.35Ga0.65As0.9999P0.0001:Si(10^−5); 𝑇=800; flow = 100; carrier = 7.85×10^17	281/263	373/359	413	198	—
EM2343
(Al0.33Ga0.67As0.995P0.005)0.9997Si0.0003; 𝑇=800; flow = 200; carrier = 8.19×10^17	276/263	377/360	411	196	392
EM2355
(Al0.426Ga0.574As0.975P0.025)0.999Si0.001; 𝑇=800; flow = 200; carrier = 7.07×10^17	274/263	378/356	413	196	393
EM2356
(Al0.43Ga0.57As0.977P0.023)0.997Si0.003; 𝑇=800; flow = 300; carrier = 4.56×10^17	271/263	382/356	412	197	392