Structural and Optical Investigations of Heterostructures Based on Al_𝑥Ga_1−𝑥As_𝑦P_1−𝑦:Si Solid Solutions Obtained by MOCVD

Table 5

Photon energies corresponding to emission peaks in AlGaAsP:Si/GaAs (100) heterostructures.

	Experimental peak positions, eV
	GaAs	Deep level				(Al𝑥Ga1−𝑥As1−𝑦P𝑦)1−𝑧Si𝑧; solid solution,; experiment	(Al𝑥Ga1−𝑥As1−𝑦P𝑦)1−𝑧Si𝑧; solid solution,; calculation from (5)
EM2350
𝑇=800; flow = 0; carrier = 3.6×10^16	1.43	—	—	—	—
EM2346
𝑇=800; flow = 0; carrier = 3.1×10^16	1.43	—	—	—	—	1.81	1.80
EM2449
𝑇=800; flow = 100; carrier = 6.5×10^17		1.39	1.45	—	—	1.74	1.72
EM2342
𝑇=800; flow = 100; carrier = 7.85×10^17		1.395	1.475	1.53	1.58	1.935	1.91
EM2355
𝑇=800; flow = 200; carrier = 7.07×10^17		1.395	1.475	1.53	1.58	—	2.00