A type of nanopinhole-based plasmonic structure is presented. It can realize superfocusing within micron-scale propagation distance with spatial resolution beyond diffraction limit. Cut-off wavelength effect is highlighted for understanding how periodicity distribution of the nanopinholes influences transmission and focusing through the structure. Redshift peak transmission occurs while the periodicity increases. In addition, focusing property of the plasmonic structures is analyzed for the monochromatic illumination with different incident wavelengths ranging from 400&#x2009;nm to 750&#x2009;nm. The easy fabrication and high focusing performance of the proposed structures may be used in data storage devices, bioimaging, and nanolithography.

Yongqi Fu

Chunlei Du

Wei Zhou

Lennie Enk Ng Lim

Nanopinholes-Based Optical Superlens

With the continued scaling of the <svg style="vertical-align:-3.13504pt;width:30.5375px;" id="M2" height="14.7125" version="1.1" viewBox="0 0 30.5375 14.7125" width="30.5375" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(1.25,0,0,-1.25,0,14.7125)"><g transform="translate(72,-60.23)"><text transform="matrix(1,0,0,-1,-71.95,63.41)"><tspan style="font-size: 12.50px; " x="0" y="0">S</tspan><tspan style="font-size: 12.50px; " x="6.9516678" y="0">i</tspan><tspan style="font-size: 12.50px; " x="10.427502" y="0">O</tspan></text><text transform="matrix(1,0,0,-1,-52.5,60.28)"><tspan style="font-size: 8.75px; " x="0" y="0">2</tspan></text></g></g></svg> thickness below 2 nm in CMOS devices, a large direct-tunnelling current flow between the gate electrode and silicon substrate is greatly impacting device performance. Therefore, higher dielectric constant materials are desirable for reducing the gate leakage while maintaining transistor performance for very thin dielectric layers. Despite its not very high dielectric constant (<svg style="vertical-align:-0.0pt;width:10.825px;" id="M3" height="5.7874999" version="1.1" viewBox="0 0 10.825 5.7874999" width="10.825" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(1.25,0,0,-1.25,0,5.7875)"><g transform="translate(72,-67.37)"><text transform="matrix(1,0,0,-1,-71.95,67.42)"><tspan style="font-size: 12.50px; " x="0" y="0">∼</tspan></text></g></g></svg>10), <svg style="vertical-align:-3.25793pt;width:39.224998px;" id="M4" height="14.8625" version="1.1" viewBox="0 0 39.224998 14.8625" width="39.224998" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(1.25,0,0,-1.25,0,14.8625)"><g transform="translate(72,-60.11)"><text transform="matrix(1,0,0,-1,-71.95,63.41)"><tspan style="font-size: 12.50px; " x="0" y="0">A</tspan><tspan style="font-size: 12.50px; " x="9.0271664" y="0">l</tspan></text><text transform="matrix(1,0,0,-1,-59.45,60.28)"><tspan style="font-size: 8.75px; " x="0" y="0">2</tspan></text><text transform="matrix(1,0,0,-1,-54.57,63.41)"><tspan style="font-size: 12.50px; " x="0" y="0">O</tspan></text><text transform="matrix(1,0,0,-1,-45.55,60.28)"><tspan style="font-size: 8.75px; " x="0" y="0">3</tspan></text></g></g></svg> has emerged as one of the most promising high-k candidates in terms of its chemical and thermal stability as its high-barrier offset. In this paper, a theoretical study of the physical and electrical properties of <svg style="vertical-align:-3.25793pt;width:39.224998px;" id="M5" height="14.8625" version="1.1" viewBox="0 0 39.224998 14.8625" width="39.224998" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(1.25,0,0,-1.25,0,14.8625)"><g transform="translate(72,-60.11)"><text transform="matrix(1,0,0,-1,-71.95,63.41)"><tspan style="font-size: 12.50px; " x="0" y="0">A</tspan><tspan style="font-size: 12.50px; " x="9.0271664" y="0">l</tspan></text><text transform="matrix(1,0,0,-1,-59.45,60.28)"><tspan style="font-size: 8.75px; " x="0" y="0">2</tspan></text><text transform="matrix(1,0,0,-1,-54.57,63.41)"><tspan style="font-size: 12.50px; " x="0" y="0">O</tspan></text><text transform="matrix(1,0,0,-1,-45.55,60.28)"><tspan style="font-size: 8.75px; " x="0" y="0">3</tspan></text></g></g></svg> gate dielectric is reported including I(V) and C(V) characteristics. By using a stack of <svg style="vertical-align:-3.25793pt;width:73.974998px;" id="M6" height="14.8625" version="1.1" viewBox="0 0 73.974998 14.8625" width="73.974998" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(1.25,0,0,-1.25,0,14.8625)"><g transform="translate(72,-60.11)"><text transform="matrix(1,0,0,-1,-71.95,63.41)"><tspan style="font-size: 12.50px; " x="0" y="0">A</tspan><tspan style="font-size: 12.50px; " x="9.0271664" y="0">l</tspan></text><text transform="matrix(1,0,0,-1,-59.45,60.28)"><tspan style="font-size: 8.75px; " x="0" y="0">2</tspan></text><text transform="matrix(1,0,0,-1,-54.57,63.41)"><tspan style="font-size: 12.50px; " x="0" y="0">O</tspan></text><text transform="matrix(1,0,0,-1,-45.55,60.28)"><tspan style="font-size: 8.75px; " x="0" y="0">3</tspan></text><text transform="matrix(1,0,0,-1,-40.67,63.41)"><tspan style="font-size: 12.50px; " x="0" y="0">/</tspan></text><text transform="matrix(1,0,0,-1,-37.2,63.41)"><tspan style="font-size: 12.50px; " x="0" y="0">S</tspan><tspan style="font-size: 12.50px; " x="6.9516678" y="0">i</tspan><tspan style="font-size: 12.50px; " x="10.427502" y="0">O</tspan></text><text transform="matrix(1,0,0,-1,-17.74,60.28)"><tspan style="font-size: 8.75px; " x="0" y="0">2</tspan></text></g></g></svg> with an appropriate equivalent oxide thickness of gate dielectric MOS, the gate leakage exhibits an important decrease. The effect of carrier trap parameters (depth and width) at the <svg style="vertical-align:-3.25793pt;width:73.974998px;" id="M7" height="14.8625" version="1.1" viewBox="0 0 73.974998 14.8625" width="73.974998" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(1.25,0,0,-1.25,0,14.8625)"><g transform="translate(72,-60.11)"><text transform="matrix(1,0,0,-1,-71.95,63.41)"><tspan style="font-size: 12.50px; " x="0" y="0">A</tspan><tspan style="font-size: 12.50px; " x="9.0271664" y="0">l</tspan></text><text transform="matrix(1,0,0,-1,-59.45,60.28)"><tspan style="font-size: 8.75px; " x="0" y="0">2</tspan></text><text transform="matrix(1,0,0,-1,-54.57,63.41)"><tspan style="font-size: 12.50px; " x="0" y="0">O</tspan></text><text transform="matrix(1,0,0,-1,-45.55,60.28)"><tspan style="font-size: 8.75px; " x="0" y="0">3</tspan></text><text transform="matrix(1,0,0,-1,-40.67,63.41)"><tspan style="font-size: 12.50px; " x="0" y="0">/</tspan></text><text transform="matrix(1,0,0,-1,-37.2,63.41)"><tspan style="font-size: 12.50px; " x="0" y="0">S</tspan><tspan style="font-size: 12.50px; " x="6.9516678" y="0">i</tspan><tspan style="font-size: 12.50px; " x="10.427502" y="0">O</tspan></text><text transform="matrix(1,0,0,-1,-17.74,60.28)"><tspan style="font-size: 8.75px; " x="0" y="0">2</tspan></text></g></g></svg> interface is also discussed.

A. Bouazra

S. Abdi-Ben Nasrallah

M. Said

A. Poncet

Current Tunnelling in MOS Devices with <svg style="vertical-align:-3.39069pt" height="16.450001" version="1.1" viewBox="0 0 80.137497 16.450001" width="80.137497" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.017,-0,0,-.017,.062,12.162)"><path id="x41" d="M673 0h-245v28q47 6 58 16t1 39l-55 154h-213q-31 -87 -36 -129q-16 -47 -5 -61t68 -19v-28h-226v28q50 7 68.5 23.5t43.5 80.5l214 524l24 9l193 -536q23 -63 41.5 -79.5t68.5 -21.5v-28zM418 280l-81 255h-2q-74 -197 -101 -255h184z" /></g><g transform="matrix(.017,-0,0,-.017,11.843,12.162)"><path id="x6C" d="M238 0h-223v26q48 5 60 17t12 61v473q0 50 -10.5 60.5t-58.5 15.5v24q73 8 148 35v-608q0 -49 11.5 -61t60.5 -17v-26z" /></g><g transform="matrix(.012,-0,0,-.012,16.162,16.25)"><path id="x32" d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" /></g><g transform="matrix(.017,-0,0,-.017,22.5,12.162)"><path id="x4F" d="M381 665q131 0 226.5 -93t95.5 -239q0 -158 -96 -253t-238 -95q-137 0 -231 95t-94 238q0 142 92.5 244.5t244.5 102.5zM359 629q-89 0 -151 -74.5t-62 -208.5q0 -141 69 -233t175 -92q90 0 150.5 74t60.5 211q0 152 -69 237.5t-173 85.5z" /></g><g transform="matrix(.012,-0,0,-.012,35.188,16.25)"><path id="x33" d="M285 378v-2q65 -13 102 -54.5t37 -97.5q0 -57 -30.5 -104.5t-74 -75t-85.5 -42t-72 -14.5q-31 0 -59.5 11t-40.5 23q-19 18 -16 36q1 16 23 33q13 10 24 0q58 -51 124 -51q55 0 88 40t33 112q0 64 -39 96.5t-88 32.5q-29 0 -64 -11l-6 29q77 25 118 57.5t41 84.5&#xA;q0 45 -26.5 69.5t-68.5 24.5q-67 0 -120 -79l-20 20l43 63q51 56 127 56h1q66 0 107 -37t41 -95q0 -42 -31 -71q-22 -23 -68 -54z" /></g><g transform="matrix(.017,-0,0,-.017,41.525,12.162)"><path id="x2F" d="M368 703l-264 -866h-60l265 866h59z" /></g><g transform="matrix(.017,-0,0,-.017,48.528,12.162)"><path id="x53" d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52&#xA;t30 -51.5t49 -42.5t67 -16q56 0 88 32.5t32 87.5q0 51 -31.5 82t-98.5 67q-80 44 -110 73q-55 53 -55 124q0 75 56 126.5t150 51.5q53 0 126 -23z" /></g><g transform="matrix(.017,-0,0,-.017,56.501,12.162)"><path id="x69" d="M135 536q-20 0 -35 15.5t-15 35.5q0 22 15 37t36 15t35.5 -15t14.5 -37q0 -21 -15 -36t-36 -15zM252 0h-220v26q48 5 59 17t11 63v206q0 47 -9 58t-54 18v24q78 12 142 39v-345q0 -51 11.5 -63t59.5 -17v-26z" /></g><g transform="matrix(.017,-0,0,-.017,61.057,12.162)"><use xlink:href="#x4F"/></g><g transform="matrix(.012,-0,0,-.012,73.738,16.25)"><use xlink:href="#x32"/></g></svg> Gate Dielectric

Computer simulations of the radiation defects created in beryllium irradiated by fast neutrons (<svg style="vertical-align:-0.30096pt;width:50.212502px;" id="M1" height="11.0625" version="1.1" viewBox="0 0 50.212502 11.0625" width="50.212502"  xmlns="http://www.w3.org/2000/svg">
	<g transform="matrix(1.25,0,0,-1.25,0,11.0625)">
		<g transform="translate(72,-63.15)">
			<text transform="matrix(1,0,0,-1,-71.95,63.5)">
				<tspan style="font-size: 12.50px; " x="0" y="0">𝐸</tspan>
				<tspan style="font-size: 12.50px; " x="12.390473" y="0">&gt;</tspan>
				<tspan style="font-size: 12.50px; " x="24.430862" y="0">0</tspan>
				<tspan style="font-size: 12.50px; " x="30.682362" y="0">.</tspan>
				<tspan style="font-size: 12.50px; " x="33.808113" y="0">1</tspan>
			</text>

		</g>
	</g>
</svg>&#x2009;MeV) using
the Geant4 and SRIM packages were carried out. The atom cascade displacements in Be at a neutron fluence
of <svg style="vertical-align:-0.3135pt;width:63.799999px;" id="M2" height="14.375" version="1.1" viewBox="0 0 63.799999 14.375" width="63.799999"  xmlns="http://www.w3.org/2000/svg">
	<g transform="matrix(1.25,0,0,-1.25,0,14.375)">
		<g transform="translate(72,-60.5)">
			<text transform="matrix(1,0,0,-1,-71.95,60.86)">
				<tspan style="font-size: 12.50px; " x="0" y="0">1</tspan>
				<tspan style="font-size: 12.50px; " x="6.2515001" y="0">.</tspan>
				<tspan style="font-size: 12.50px; " x="9.3772497" y="0">6</tspan>
				<tspan style="font-size: 12.50px; " x="18.404415" y="0">×</tspan>
				<tspan style="font-size: 12.50px; " x="29.182001" y="0">1</tspan>
				<tspan style="font-size: 12.50px; " x="35.433502" y="0">0</tspan>
			</text>

			<text transform="matrix(1,0,0,-1,-30.26,66.03)">
				<tspan style="font-size: 8.75px; " x="0" y="0">2</tspan>
				<tspan style="font-size: 8.75px; " x="4.3759999" y="0">0</tspan>
			</text>

		</g>
	</g>
</svg>&#x2009;n/c<svg style="vertical-align:-0.0pt;width:18.375px;" id="M3" height="13.775" version="1.1" viewBox="0 0 18.375 13.775" width="18.375"  xmlns="http://www.w3.org/2000/svg">
	<g transform="matrix(1.25,0,0,-1.25,0,13.775)">
		<g transform="translate(72,-60.98)">
			<text transform="matrix(1,0,0,-1,-71.95,61.03)">
				<tspan style="font-size: 12.50px; " x="0" y="0">m</tspan>
			</text>

			<text transform="matrix(1,0,0,-1,-62.22,66.03)">
				<tspan style="font-size: 8.75px; " x="0" y="0">2</tspan>
			</text>

		</g>
	</g>
</svg> were determined to be 0.06&#x2009;dpa and the helium concentration was calculated to be 168&#x2009;appm. The
concentration of <svg style="vertical-align:-0.0pt;width:20.112499px;" id="M4" height="13.8625" version="1.1" viewBox="0 0 20.112499 13.8625" width="20.112499"  xmlns="http://www.w3.org/2000/svg">
	<g transform="matrix(1.25,0,0,-1.25,0,13.8625)">
		<g transform="translate(72,-60.91)">
			<text transform="matrix(1,0,0,-1,-71.95,65.96)">
				<tspan style="font-size: 8.75px; " x="0" y="0">6</tspan>
			</text>

			<text transform="matrix(1,0,0,-1,-67.08,60.96)">
				<tspan style="font-size: 12.50px; " x="0" y="0">L</tspan>
				<tspan style="font-size: 12.50px; " x="7.6393328" y="0">i</tspan>
			</text>

		</g>
	</g>
</svg> has been estimated to be 5&#x25; in comparison to the He concentration. Nanoscale calculations
were done in <svg style="vertical-align:-0.3135pt;width:80.912498px;" id="M5" height="11.075" version="1.1" viewBox="0 0 80.912498 11.075" width="80.912498"  xmlns="http://www.w3.org/2000/svg">
	<g transform="matrix(1.25,0,0,-1.25,0,11.075)">
		<g transform="translate(72,-63.14)">
			<text transform="matrix(1,0,0,-1,-71.95,63.5)">
				<tspan style="font-size: 12.50px; " x="0" y="0">3</tspan>
				<tspan style="font-size: 12.50px; " x="6.2515001" y="0">0</tspan>
				<tspan style="font-size: 12.50px; " x="15.278666" y="0">×</tspan>
				<tspan style="font-size: 12.50px; " x="26.056252" y="0">3</tspan>
				<tspan style="font-size: 12.50px; " x="32.307751" y="0">0</tspan>
				<tspan style="font-size: 12.50px; " x="41.334919" y="0">×</tspan>
				<tspan style="font-size: 12.50px; " x="52.112503" y="0">3</tspan>
				<tspan style="font-size: 12.50px; " x="58.364002" y="0">0</tspan>
			</text>

		</g>
	</g>
</svg>&#x2009;nm cube of fast neutron-irradiated Be. A correlation between the Be primary knock-on atom
(PKA) energies and the damage cascades has been established. The final defect distributions of single vacancies,
divacancies, and small vacancy clusters were examined. Our results indicate that the damages caused by He atoms
are about 3 times less than damages caused by Be primary knock-on atoms (PKAs).

T. Troev

N. Nankov

L. Petrov

E. Popov

Computer Modeling of Displacement Cascades in Beryllium Irradiated with Intensive Neutron Flux

We construct a dyon solution for the noncommutative version of the Yang-Mills-Higgs model with a <svg style="vertical-align:-0.1254pt;width:8.7875004px;" id="M1" height="10.875" version="1.1" viewBox="0 0 8.7875004 10.875" width="8.7875004" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(1.25,0,0,-1.25,0,10.875)"><g transform="translate(72,-63.3)"><text transform="matrix(1,0,0,-1,-71.95,63.47)"><tspan style="font-size: 12.50px; " x="0" y="0">𝜗</tspan></text></g></g></svg>-term. Extending the Noether method to the case of a noncommutative gauge theory, we analyze the effect of CP violation induced both by the <svg style="vertical-align:-0.1254pt;width:8.7875004px;" id="M2" height="10.875" version="1.1" viewBox="0 0 8.7875004 10.875" width="8.7875004" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(1.25,0,0,-1.25,0,10.875)"><g transform="translate(72,-63.3)"><text transform="matrix(1,0,0,-1,-71.95,63.47)"><tspan style="font-size: 12.50px; " x="0" y="0">𝜗</tspan></text></g></g></svg>-term and by noncommutativity proving that the
Witten effect formula for the dyon charge remains the same as in ordinary space.

L. Cieri

F. A. Schaposnik

The Dyon Charge in Noncommutative Gauge Theories

Using hybrid density functional theory and a relatively large basis set, the lowest energy equilibrium structure, vibrational spectrum, and natural orbital analysis were obtained for magnesium diboride clusters [(MgB<sub  >2</sub>)<sub  >x</sub> for
<svg style="vertical-align:-1.76814pt;width:50.25px;" id="M1" height="12.8875" version="1.1" viewBox="0 0 50.25 12.8875" width="50.25"  xmlns="http://www.w3.org/2000/svg">
    <g transform="matrix(1.25,0,0,-1.25,0,12.8875)">
        <g transform="translate(72,-61.69)">
            <text transform="matrix(1,0,0,-1,-71.95,63.5)">
                <tspan style="font-size: 12.50px; " x="0" y="0">𝑥</tspan>
                <tspan style="font-size: 12.50px; " x="10.339981" y="0">=</tspan>
                <tspan style="font-size: 12.50px; " x="22.380369" y="0">1</tspan>
                <tspan style="font-size: 12.50px; " x="28.63187" y="0">,</tspan>
                <tspan style="font-size: 12.50px; " x="33.845619" y="0">2</tspan>
            </text>

        </g>
    </g>
</svg>, and 3]. For comparison, boron clusters 
<svg style="vertical-align:-3.21404pt;width:153.1875px;" id="M2" height="14.825" version="1.1" viewBox="0 0 153.1875 14.825" width="153.1875"  xmlns="http://www.w3.org/2000/svg">
    <g transform="matrix(1.25,0,0,-1.25,0,14.825)">
        <g transform="translate(72,-60.14)">
            <text transform="matrix(1,0,0,-1,-71.95,63.4)">
                <tspan style="font-size: 12.50px; " x="0" y="0">[</tspan>
                <tspan style="font-size: 12.50px; " x="4.1634989" y="0">B</tspan>
            </text>

            <text transform="matrix(1,0,0,-1,-59.45,60.27)">
                <tspan style="font-size: 8.75px; " x="0" y="0">𝑥</tspan>
            </text>

            <text transform="matrix(1,0,0,-1,-49.97,63.4)">
                <tspan style="font-size: 12.50px; " x="0" y="0">f</tspan>
                <tspan style="font-size: 12.50px; " x="3.7759061" y="0">o</tspan>
                <tspan style="font-size: 12.50px; " x="10.027406" y="0">r</tspan>
                <tspan style="font-size: 12.50px; " x="18.341902" y="0">𝑥</tspan>
                <tspan style="font-size: 12.50px; " x="28.694386" y="0">=</tspan>
                <tspan style="font-size: 12.50px; " x="40.734776" y="0">2</tspan>
                <tspan style="font-size: 12.50px; " x="46.986275" y="0">,</tspan>
                <tspan style="font-size: 12.50px; " x="52.187523" y="0">4</tspan>
                <tspan style="font-size: 12.50px; " x="58.439022" y="0">,</tspan>
                <tspan style="font-size: 12.50px; " x="67.816269" y="0">a</tspan>
                <tspan style="font-size: 12.50px; " x="73.367607" y="0">n</tspan>
                <tspan style="font-size: 12.50px; " x="79.619102" y="0">d</tspan>
                <tspan style="font-size: 12.50px; " x="90.046608" y="0">6</tspan>
                <tspan style="font-size: 12.50px; " x="96.298103" y="0">]</tspan>
            </text>

        </g>
    </g>
</svg> were also considered. The
MgB<sub  >2</sub> and 
(MgB<sub  >2</sub>)<sub  >2</sub> showed equilibrium structures with the boron atoms in arrangements similar to what was obtained for pure boron atoms, whereas, for 
(MgB<sub  >2</sub>)<sub  >3</sub> a different arrangement of boron was obtained. From the population analysis, large electron density in the boron atoms forming the clusters was observed.

D. Rodríguez

D. Soto

E. Ramírez

A. Cruz

A. Santana

G. E. López

Study of Magnesium Diboride Clusters Using Hybrid Density Functional Theory

Axel Schulze-Halberg

Reduction of Time-Dependent Schr&#xF6;dinger Equations with Effective Mass to Stationary Schr&#xF6;dinger Equations

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Do you think there is an emerging area of research that really needs to be highlighted? Or an existing research area that has been overlooked or would benefit from deeper investigation? Raise the profile of a research area by leading a Special Issue.

Physics Research International