Texture, Stress, and Microstructure

Texture, Stress, and Microstructure / 1991 / Article
Special Issue

Ninth International Conference on Textures of Materials

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Volume 14 |Article ID 597810 | https://doi.org/10.1155/TSM.14-18.775

G. Abbruzzese, A. Campopiano, S. Fortunati, "Model of Secondary Recrystallization in Silicon-Iron and Comparison With Experiments", Texture, Stress, and Microstructure, vol. 14, Article ID 597810, 6 pages, 1991. https://doi.org/10.1155/TSM.14-18.775

Model of Secondary Recrystallization in Silicon-Iron and Comparison With Experiments

Abstract

A comparative analysis has been made of selective grain growth processes at different layers of a grain oriented silicon iron sheet. Shorter incubation time and best orientation selection during secondary recrystallization appear at 40 μm from the sheet surface. This has been linked to the presence of a relatively strong <001>//RD fiber in the texture. The differences through the sheet thickness are assumed to be inherited from the hot band. Computer simulations in the framework of the statistical theory of grain growth support the proposed selection mechanisms.

Copyright © 1991 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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