Table of Contents
Textures and Microstructures
Volume 14 (1991)–18
http://dx.doi.org/10.1155/TSM.14-18.775

Model of Secondary Recrystallization in Silicon-Iron and Comparison With Experiments

Centro Sviluppo Materiali, C.P. 10747 Roma-Eur, Italy

Copyright © 1991 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

A comparative analysis has been made of selective grain growth processes at different layers of a grain oriented silicon iron sheet. Shorter incubation time and best orientation selection during secondary recrystallization appear at 40 μm from the sheet surface. This has been linked to the presence of a relatively strong <001>//RD fiber in the texture. The differences through the sheet thickness are assumed to be inherited from the hot band. Computer simulations in the framework of the statistical theory of grain growth support the proposed selection mechanisms.