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VLSI Design
Volume 3 (1995), Issue 2, Pages 115-129

On the Structure and Closure-Condition of the Hydrodynamic Model

Dipartimento di Elettronica, Informatica e Sistemistica, Università di Bologna Viale Risorgimento 2, Bologna 40136, Italy

Received 3 October 1994

Copyright © 1995 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [5 citations]

The following is the list of published articles that have cited the current article.

  • Am Anile, and V Romano, “Hydrodynamical modeling of charge carrier transport in semiconductors,” Meccanica, vol. 35, no. 3, pp. 249–296, 2000. View at Publisher · View at Google Scholar
  • Am Anile, V Romano, and O Muscato, “Moment equations with maximum entropy closure for carrier transport in semi conductor devices: Validation in bulk silicon,” Vlsi Design, vol. 10, no. 4, pp. 335–354, 2000. View at Publisher · View at Google Scholar
  • O Muscato, “The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models,” Physica A, vol. 289, no. 3-4, pp. 422–458, 2001. View at Publisher · View at Google Scholar
  • Kamran Mohseni, Ali Shakouri, Rajeev J. Ram, and Mathew C. Abraham, “Electron vortices in semiconductors devices,” Physics of Fluids, vol. 17, no. 10, pp. 100602, 2005. View at Publisher · View at Google Scholar
  • Ansgar Jüngel, Stefan Krause, and Paola Pietra, “A Hierarchy of Diffusive Higher-Order Moment Equations for Semiconductors,” SIAM Journal on Applied Mathematics, vol. 68, no. 1, pp. 171–198, 2007. View at Publisher · View at Google Scholar