Table of Contents
VLSI Design
Volume 3, Issue 2, Pages 145-158
http://dx.doi.org/10.1155/1995/47065

Mixed-RKDG Finite Element Methods for the 2-D Hydrodynamic Model for Semiconductor Device Simulation

1Department of Mathematics and the Institute for Scientific Computation, Texas A&M University, College Station, TX 77843, USA
2School of Mathematics, , University of Minnesota, Minneapolis, Minnesota 55455, USA
3Department of Mathematics, Northwestern University, Evanston, IL 60208, USA
4Division of Applied Mathematics, Brown University, Providence, RI 02912, USA

Received 1 January 1994

Copyright © 1995 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Zhangxin Chen, Bernardo Cockburn, Joseph W. Jerome, and Chi-Wang Shu, “Mixed-RKDG Finite Element Methods for the 2-D Hydrodynamic Model for Semiconductor Device Simulation,” VLSI Design, vol. 3, no. 2, pp. 145-158, 1995. https://doi.org/10.1155/1995/47065.