Table of Contents
VLSI Design
Volume 3, Issue 2, Pages 179-200
http://dx.doi.org/10.1155/1995/97025

Electron Transport Using the Quantum Corrected Hydrodynamic Equations

Scientific Research Associates, Inc., Glastonbury 06033, CT, USA

Received 1 August 1993

Copyright © 1995 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Transport in one- and two-dimensional semiconductor device structures is considered using a set of quantum corrected hydrodynamic equations. Simple one-dimensional simulations demonstrate the need to include quantum effects in structures with sharp interfaces. Application to a two-dimensional quantum well HEMT structure is then considered. A brief discussion of the computational procedure is also presented.