VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 018156 | https://doi.org/10.1155/1998/18156

Daniel C. Kerr, Isaak D. Mayergoyz, "3-D Device Simulation Using Intelligent Solution Method Control", VLSI Design, vol. 6, Article ID 018156, 6 pages, 1998. https://doi.org/10.1155/1998/18156

3-D Device Simulation Using Intelligent Solution Method Control

Abstract

In this paper, a hybrid solution method is implemented for solving the semiconductor transport equations. The hybrid “local Newton” method consists of a combination of the fixedpoint iteration (FPI) and Newton’s methods. The FPI technique is nearly ideally suited to solving large, 3-D systems of semiconductor equations on machines of limited computer memory ; however, it has certain limitations. This motivates the local Newton method, which coordinates the use of both the FPI and Newton’s methods, for convergence faster than either method alone.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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