Daniel C. Kerr, Isaak D. Mayergoyz, "3-D Device Simulation Using Intelligent Solution Method Control", VLSI Design, vol. 6, Article ID 018156, 6 pages, 1998. https://doi.org/10.1155/1998/18156
3-D Device Simulation Using Intelligent Solution Method Control
In this paper, a hybrid solution method is implemented for solving the semiconductor transport equations. The hybrid “local Newton” method consists of a combination of the fixedpoint iteration (FPI) and Newton’s methods. The FPI technique is nearly ideally suited to solving large, 3-D systems of semiconductor equations on machines of limited computer memory ; however, it has certain limitations. This motivates the local Newton method, which coordinates the use of both the FPI and Newton’s methods, for convergence faster than either method alone.
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