VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 21818 | 6 pages | https://doi.org/10.1155/1998/21818

Analysis and Simulation of Extended Hydrodynamic Models: The Multi-Valley Gunn Oscillator and MESFET Symmetries

Abstract

We introduce a novel two carrier hydrodynamic model, which incorporates higher dimensional geometric effects into a one dimensional model. We study (1) the GaAs device in the notched oscillator circuit, and, (2) a MESFET channel, and its symmetries. We present new mathematical results for a reduced model.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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