One-Dimensional Analysis of Subthreshold Characteristics of SOI-MOSFET Considering Quantum Mechanical Effects
We have been studying on subthreshold characteristics of SOI MOSFETs in terms of substrate bias dependence, using a 1-D Poisson equation on an SOI multi-layer structure for estimating structural parameters of real devices. Here, we consider quantum mechanical effects in the electron inversion layer of thin SOI MOSFETs, implementing a self-consistent solver of Poisson and Schrödinger equations in a 1-D subthreshold simulator. From results of simulations, we have concluded that quantum mechanical effects need to be considered in analizing thin SOI devices.
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