VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 023890 | https://doi.org/10.1155/1998/23890

Rimon Ikeno, Hiroshi Ito, Kunihiro Asada, "One-Dimensional Analysis of Subthreshold Characteristics of SOI-MOSFET Considering Quantum Mechanical Effects", VLSI Design, vol. 6, Article ID 023890, 3 pages, 1998. https://doi.org/10.1155/1998/23890

One-Dimensional Analysis of Subthreshold Characteristics of SOI-MOSFET Considering Quantum Mechanical Effects

Abstract

We have been studying on subthreshold characteristics of SOI MOSFETs in terms of substrate bias dependence, using a 1-D Poisson equation on an SOI multi-layer structure for estimating structural parameters of real devices[1]. Here, we consider quantum mechanical effects in the electron inversion layer of thin SOI MOSFETs, implementing a self-consistent solver of Poisson and Schrödinger equations in a 1-D subthreshold simulator. From results of simulations, we have concluded that quantum mechanical effects need to be considered in analizing thin SOI devices.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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