Table of Contents
VLSI Design
Volume 6, Issue 1-4, Pages 65-67
http://dx.doi.org/10.1155/1998/23890

One-Dimensional Analysis of Subthreshold Characteristics of SOI-MOSFET Considering Quantum Mechanical Effects

1Dept. of Electronic Eng., Fac. of Engineering, The University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
2Texas Instruments Tsukuba R&D Center, 17 Miyukigaoka, Ibaraki, Tsukuba 305, Japan

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We have been studying on subthreshold characteristics of SOI MOSFETs in terms of substrate bias dependence, using a 1-D Poisson equation on an SOI multi-layer structure for estimating structural parameters of real devices[1]. Here, we consider quantum mechanical effects in the electron inversion layer of thin SOI MOSFETs, implementing a self-consistent solver of Poisson and Schrödinger equations in a 1-D subthreshold simulator. From results of simulations, we have concluded that quantum mechanical effects need to be considered in analizing thin SOI devices.