VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 024073 | https://doi.org/10.1155/1998/24073

Matthias K. Gobbert, Timothy S. Cale, Christian A. Ringhofer, "The Combination of Equipment Scale and Feature Scale Models for Chemical Vapor Deposition Via a Homogenization Technique", VLSI Design, vol. 6, Article ID 024073, 5 pages, 1998. https://doi.org/10.1155/1998/24073

The Combination of Equipment Scale and Feature Scale Models for Chemical Vapor Deposition Via a Homogenization Technique

Abstract

In the context of semiconductor manufacturing, chemical vapor deposition (CVD) denotes the deposition of a solid from gaseous species via chemical reactions on the wafer surface. In order to obtain a realistic process model, this paper proposes the introduction of an intermediate scale model on the scale of a die. Its mathematical model is a reaction-diffusion equation with associated boundary conditions including a flux condition at the micro structured surface. The surface is given in general parameterized form. A homoganization technique from asymptotic analysis is used to replace this boundary condition by a condition on the flat surface to make a numerical solution feasible. Results from a mathematical test problem are included.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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