Hydrodynamic Device Simulation with New State Variables Specially Chosen for a Block Gummel Iterative Approach

Abstract

A new numerical formulation for solving the hydrodynamic model of semiconductor devices is presented. The method is based on using new variables to transform the conventional hydrodynamic equations into forms which facilitate numerical evaluation with a block Gummel approach. To demonstrate the new method, we apply it to model a 0.35 μm 2-D LDD MOSFET, where robust convergence properties are observed.