Nobuyuki Sano, Akira Yoshii, "Quantum Kinetic Transport under High Electric Fields", VLSI Design, vol. 6, Article ID 038125, 5 pages, 1998. https://doi.org/10.1155/1998/38125
Quantum Kinetic Transport under High Electric Fields
Quantum kinetic transport under high electric fields is investigated with emphasis on the intracollisional field effect (ICFE) in low-dimensional structures. It is shown that the ICFE in GaAs one-dimensional quantum wires is already significant under moderate electric field strengths (≥ a few hundreds V/cm). This is a marked contrast to the cases in bulk, where the ICFE is expected to be significant under extremely strong electric fields (≥ MV/cm). Employing the Monte Carlo method including the ICFE, the electron drift velocity in quantum wires is shown to be much smaller than that expected from earlier investigations.
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