VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 038125 | https://doi.org/10.1155/1998/38125

Nobuyuki Sano, Akira Yoshii, "Quantum Kinetic Transport under High Electric Fields", VLSI Design, vol. 6, Article ID 038125, 5 pages, 1998. https://doi.org/10.1155/1998/38125

Quantum Kinetic Transport under High Electric Fields


Quantum kinetic transport under high electric fields is investigated with emphasis on the intracollisional field effect (ICFE) in low-dimensional structures. It is shown that the ICFE in GaAs one-dimensional quantum wires is already significant under moderate electric field strengths (≥ a few hundreds V/cm). This is a marked contrast to the cases in bulk, where the ICFE is expected to be significant under extremely strong electric fields (≥ MV/cm). Employing the Monte Carlo method including the ICFE, the electron drift velocity in quantum wires is shown to be much smaller than that expected from earlier investigations.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

More related articles

 PDF Download Citation Citation
 Order printed copiesOrder

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.