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VLSI Design
Volume 6 (1998), Issue 1-4, Pages 3-7

Quantum Kinetic Transport under High Electric Fields

1NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan
2Institute of Applied Physics, University of Tsukuba, lbaraki, Tsukuba 305, Japan

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Quantum kinetic transport under high electric fields is investigated with emphasis on the intracollisional field effect (ICFE) in low-dimensional structures. It is shown that the ICFE in GaAs one-dimensional quantum wires is already significant under moderate electric field strengths (≥ a few hundreds V/cm). This is a marked contrast to the cases in bulk, where the ICFE is expected to be significant under extremely strong electric fields (≥ MV/cm). Employing the Monte Carlo method including the ICFE, the electron drift velocity in quantum wires is shown to be much smaller than that expected from earlier investigations.