VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 045289 | https://doi.org/10.1155/1998/45289

Mahbub Rashed, W.-K. Shih, S. Jallepalli, R. Zaman, T. J. T. Kwan, C. M. Maziar, "A Monte Carlo study ,of Electron Transport in Strained Si/SiGe Heterostructures", VLSI Design, vol. 6, Article ID 045289, 4 pages, 1998. https://doi.org/10.1155/1998/45289

A Monte Carlo study ,of Electron Transport in Strained Si/SiGe Heterostructures

Abstract

Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated using a Monte Carlo (MC) simulation tool. The study includes both electron transport in bulk materials and in nMOS structures. The bulk MC simulator is based on a multiband analytical model, “fitted bands”, representing the features of a realistic energy bandstructure. The investigation includes the study of low- and high-field electron transport characteristics at 77 K and 300 K. Single particle MC simulations are performed for a strained silicon nMOS structure at room temperature. Both calculations show saturation of mobility enhancement in strained silicon beyond germanium mole fraction of 0.2.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


More related articles

 PDF Download Citation Citation
 Order printed copiesOrder
Views97
Downloads280
Citations