Mahbub Rashed, W.-K. Shih, S. Jallepalli, R. Zaman, T. J. T. Kwan, C. M. Maziar, "A Monte Carlo study ,of Electron Transport in Strained Si/SiGe Heterostructures", VLSI Design, vol. 6, Article ID 045289, 4 pages, 1998. https://doi.org/10.1155/1998/45289
A Monte Carlo study ,of Electron Transport in Strained Si/SiGe Heterostructures
Electron transport in pseudomorphically-grown silicon on relaxed (001) Si1-xGex is investigated using a Monte Carlo (MC) simulation tool. The study includes both electron transport in bulk materials and in nMOS structures. The bulk MC simulator is based on a multiband analytical model, “fitted bands”, representing the features of a realistic energy bandstructure. The investigation includes the study of low- and high-field electron transport characteristics at 77 K and 300 K. Single particle MC simulations are performed for a strained silicon nMOS structure at room temperature. Both calculations show saturation of mobility enhancement in strained silicon beyond germanium mole fraction of 0.2.
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