Table of Contents
VLSI Design
Volume 6, Issue 1-4, Pages 35-38
http://dx.doi.org/10.1155/1998/53694

Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge

Institute for Microelectronics, TU Vienna, Gusshausstrasse 27-29, Vienna A-1040, Austria

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Christoph Wasshuber and Hans Kosina, “Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge,” VLSI Design, vol. 6, no. 1-4, pp. 35-38, 1998. https://doi.org/10.1155/1998/53694.